Transistors most of the transistors used in our circuits are bc 547 and bc 557.
Mat 102 transistor.
50 v max low noise voltage at 100 hz 1 ma.
The mat02 should be used in any application where low noise is a priority.
Size small signal med pwr power etc.
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Some magazines use the term tup for transistor universal pnp or tun for transistor universal npn.
Other applications such as log antilog circuits may use the ex cellent logging conformity of the mat02.
In summary to determine what type of transistor is by swapping positive and negative probes until.
500 min at i c 1 ma 300 min at i c 1 a excellent log conformance.
Dual monolithic transistor mat02 features low offset voltage.
I c how much current it can carry.
For transistors we need to know the following characteristics.
Mp102 transistor equivalent substitute cross reference search mp102 datasheet pdf 1 1.
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Dmp1022ufdf pdf size 439k update mosfet dmp1022ufdf 12v p channel enhancement mode mosfet product summary features id max 0 6mm profile ideal for low profile applications v br dss rds on max ta 25 c pcb footprint of 4mm2 low gate threshold.
The mat02 can be used as an input stage to make an amplifier with noise voltage of less than 1 0 nv hz at 100 hz.
H fe device gain.
1 0 nv hz max high gain h fe.
Type of device bipolar fet scr etc.
0 1 v c max improved direct replacement for lm194 394 note substrate is connected to case on to 78.
These are classified as universal or common npn and pnp types with a voltage rating of about 25v 100ma collector current and a gain of about 100.
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F t how high a frequency it will operate at.
The mat12 is a dual npn matched transistor pair that is specifically designed to meet the requirements of ultralownoise audio systems with its extremely low input base spreading resistance rbb is typically 28 ω and high current gain hfe typically exceeds 600 at ic 1 ma the mat12 can achieve outstanding signal to noise ratios.
Easy way to test a transistor using a digital multimeter.
Polarity npn pnp n channel p channel etc.
R be 0 3 low offset voltage drift.
Tion between the transistors.
Sensors and actuators 10 1986 103 125 103 thermal sensors based on transistors gerard c m meijer delft university of technology department of electrical engineering mehelweg 4 2628 cd delft the netherlands received may 27 1986 accepted june 24 1986 abstract this paper reviews various methods of utilizing bipolar transistors and integrated circuits as temperature transducers.
